High Power SSPA Based on GaN HEMTs for S-band Military Radars
نویسندگان
چکیده
In this paper, we have developed a high power solid-state power amplifier (SSPA) for Sband military radars. The SSPA consists of a high power amplifier (HPA) module combined GaN based power amplifier pallets, a drive amplifier (DA) module, a digital control module and a power supply unit. The SSPA shows the total output power of 62 dBm in S-band.
منابع مشابه
Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
متن کاملHigh Performance GaN HEMTs on 3-inch SI-SiC Substrates
Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...
متن کاملA Review of GaN on SiC High Electron-Mobility Power Transistors (HEMTs) and MMICs
Gallium–nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and elded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupl...
متن کامل7b.4 Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band
A promising candidate for the next generation of microwave power devices, AlGaN/GaN HEMT has aroused numerous research interests due to its inherent high power characteristic. It has been studied intensively as high power microwave devices for satellite communication systems and in recent years, many GaN-based HEMTs have been reported for power amplification applications at Ka-band [13]. High g...
متن کاملDesign of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کامل